Please use this identifier to cite or link to this item: http://idr.nitk.ac.in/jspui/handle/123456789/11764
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dc.contributor.authorFernandes, J.M.
dc.contributor.authorRaveendra, Kiran, M.
dc.contributor.authorUlla, H.
dc.contributor.authorSatyanarayan, M.N.
dc.contributor.authorUmesh, G.
dc.date.accessioned2020-03-31T08:35:34Z-
dc.date.available2020-03-31T08:35:34Z-
dc.date.issued2014
dc.identifier.citationSuperlattices and Microstructures, 2014, Vol.76, , pp.385-393en_US
dc.identifier.urihttp://idr.nitk.ac.in/jspui/handle/123456789/11764-
dc.description.abstractThe charge accumulation leading to injection at the organic interface in the sequentially doped hole-only device structure is studied using capacitance and impedance based spectroscopic techniques. In this paper, we investigate the role of p-type dopant 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ) in the charge transport properties of N,N'-Di(1-naphthyl)-N,N'-diphenyl-(1,1?-biphenyl)-4,4?-diamine (?-NPD) through sequential deposition. We show that the hole injection into ?-NPD increases with the increase of interlayer (F4TCNQ) thickness by correlating the current density-voltage, capacitance-voltage, capacitance-frequency and impedance measurements. 2014 Elsevier Ltd. All rights reserved.en_US
dc.titleInvestigation of hole-injection in ?-NPD using capacitance and impedance spectroscopy techniques with F4TCNQ as hole-injection layer: Initial studiesen_US
dc.typeArticleen_US
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