High-performance low voltage operation of indium zinc tin oxide thin film transistors using chemically derived sodium ?-alumina dielectric

Abstract

We present high performance, low voltage (? 3 V) operation of thin film transistors (TFTs) with indium zinc tin oxide (IZTO: In 4 Sn 4 ZnO 15 )-semiconductor. The film of IZTO was fabricated via low-temperature (200 C) solution combustion processing without incorporating an external fuel. As 2-methoxyethanol is a widely used organic solvent due to its high dissolution capability, serve the purpose of both the solvent and the fuel. On quantification from the balanced redox reaction, 0.3% of 2-methoxyethanol assisted for the action of fuel and helped in the formation of metal oxide, and the rest (99.7%) served the purpose of being dissolution medium. The balanced redox chemistry yielded a significant fraction of (56.5%) metal oxide at 200 C confirmed via high-resolution oxygen 1s spectrum. Further, the chemically derived thin film of sodium ?-alumina with a dielectric constant of ~ 21, while annealing at 350 C incorporated in the TFT for the realization of low voltage operation. The performance assessment is systematically carried out both silicon dioxide (SiO 2 ) and sodium ?-alumina and found that the TFTs with SiO 2 and IZTO exhibited a saturation mobility ( sat ), I on /I off ratio and the threshold voltage (V th ) of 0.50 0.02 cm 2 V ?1 s ?1 , 1.25 10 4 and 6.6 0.79 V respectively. While changing the dielectric to sodium ?-alumina presented a sat , I on /I off ratio and V th of 4.21 0.18 cm 2 V ?1 s ?1 , 1.4 10 2 and 0.47 0.08 V respectively. 2019, Springer Science+Business Media, LLC, part of Springer Nature.