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DC Field | Value | Language |
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dc.contributor.author | Shamim, M.Z.M. | |
dc.contributor.author | Persheyev, S. | |
dc.contributor.author | Zaidi, M. | |
dc.contributor.author | Usman, M. | |
dc.contributor.author | Shiblee, M. | |
dc.contributor.author | Ali, S.J. | |
dc.contributor.author | Rahman, M.R. | |
dc.date.accessioned | 2020-03-31T08:39:23Z | - |
dc.date.available | 2020-03-31T08:39:23Z | - |
dc.date.issued | 2020 | |
dc.identifier.citation | Integrated Ferroelectrics, 2020, Vol.204, 1, pp.47-57 | en_US |
dc.identifier.uri | http://idr.nitk.ac.in/jspui/handle/123456789/12486 | - |
dc.description.abstract | Self-aligned silicon micro-nano structured electron field emitter arrays were fabricated using pulsed krypton fluoride (KrF) excimer laser crystallization (ELC) of hydrogenated amorphous thin silicon films (a-Si:H) on metal coated backplane samples. We investigate the effect of laser processing parameters on the growth of micro-nano conical structures on the surface of the thin silicon films. Randomly oriented conical structures as high as 1 m were fabricated using laser pulse frequency of 100 Hz and sample stage scanning speed of 0.25 mm/sec. Best field emission (FE) results were measured from samples with the highest surface features with FE currents in the order of 10?6 A and low turn-on emission threshold of ?14 V/ m. Light emission from the prototype demonstrators was tested using bespoke driver electronics and planar anodes coated with indium tin-oxide (ITO) and medium voltage FE phosphors, to exemplify their usage for future flat panel display technologies. 2019, 2019 Taylor & Francis Group, LLC. | en_US |
dc.title | Micro-Nano Fabrication of Self-Aligned Silicon Electron Field Emitter Arrays Using Pulsed KrF Laser Irradiation | en_US |
dc.type | Article | en_US |
Appears in Collections: | 1. Journal Articles |
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