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http://idr.nitk.ac.in/jspui/handle/123456789/12686Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Sadananda, Kumar, N. | |
| dc.contributor.author | Bangera, K.V. | |
| dc.contributor.author | Shivakumar, G.K. | |
| dc.date.accessioned | 2020-03-31T08:41:59Z | - |
| dc.date.available | 2020-03-31T08:41:59Z | - |
| dc.date.issued | 2015 | |
| dc.identifier.citation | Semiconductors, 2015, Vol.49, 7, pp.899-904 | en_US |
| dc.identifier.uri | http://idr.nitk.ac.in/jspui/handle/123456789/12686 | - |
| dc.description.abstract | Antimony (Sb) doped zinc oxide (ZnO) thin films were deposited on the glass substrate at 450 C using spray pyrolysis technique. Effect of Sb doping on surface morphology structural, optical and electrical properties were studied. X-ray diffraction (XRD) analysis showed that both the undoped and doped ZnO thin films are polycrystalline in nature with (101) preferred orientation. SEM analysis showed a change in surface morphology of Sb doped ZnO thin films. Doping results in a marked increase in conductivity without affecting the transmittance of the films. ZnO films prepared with 3 at % Sb shows the lowest resistivity of 0.185 Ohm cm with a Hall mobility of 54.05 cm2 V 1 s 1, and a hole concentration of 6.25 1017 cm 3. 2015, Pleiades Publishing, Ltd. | en_US |
| dc.title | Properties of antimony doped ZnO thin films deposited by spray pyrolysis technique | en_US |
| dc.type | Article | en_US |
| Appears in Collections: | 1. Journal Articles | |
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