Please use this identifier to cite or link to this item: http://idr.nitk.ac.in/jspui/handle/123456789/12692
Full metadata record
DC FieldValueLanguage
dc.contributor.authorSadananda, Kumar, N.
dc.contributor.authorBangera, K.V.
dc.contributor.authorAnandan, C.
dc.contributor.authorShivakumar, G.K.
dc.date.accessioned2020-03-31T08:41:59Z-
dc.date.available2020-03-31T08:41:59Z-
dc.date.issued2013
dc.identifier.citationJournal of Alloys and Compounds, 2013, Vol.578, , pp.613-619en_US
dc.identifier.urihttp://idr.nitk.ac.in/jspui/handle/123456789/12692-
dc.description.abstractUndoped and Bi doped zinc oxide thin films were deposited on glass substrate at 450 C using spray pyrolysis technique. The X-ray diffraction studies shows that Bi doped ZnO films are polycrystalline hexagonal structure with a preferred orientation along (101) direction. Crystallites size of the films decreases with increasing doping concentration. Scanning electron microscope image shows change in the surface morphology. The composition of Zn, O and Bi elements in the undoped and Bi doped ZnO films were investigated by X-ray photoelectron spectroscopy. Bi doped ZnO thin films show a transparency nearly 75% in the visible region. The optical band gap of ZnO thin films reduces from 3.25 eV to 3.12 eV with an increase in Bi concentration from 0 to 5at.% respectively. Electrical conductivity of ZnO thin films increased from 0.156 to 6.02S/cm with increasing Bi dopant concentration from 0% to 5% respectively. 2013 Elsevier B.V. All rights reserved.en_US
dc.titleProperties of ZnO:Bi thin films prepared by spray pyrolysis techniqueen_US
dc.typeArticleen_US
Appears in Collections:1. Journal Articles

Files in This Item:
There are no files associated with this item.


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.