Please use this identifier to cite or link to this item: http://idr.nitk.ac.in/jspui/handle/123456789/15912
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dc.contributor.authorVaradharajaperumal S.
dc.contributor.authorAlagarasan D.
dc.contributor.authorSripan C.
dc.contributor.authorGanesan R.
dc.contributor.authorSatyanarayan M.N.
dc.contributor.authorHegde G.
dc.date.accessioned2021-05-05T10:28:28Z-
dc.date.available2021-05-05T10:28:28Z-
dc.date.issued2021
dc.identifier.citationMaterials Research Bulletin Vol. 133 , , p. -en_US
dc.identifier.urihttps://doi.org/10.1016/j.materresbull.2020.111081
dc.identifier.urihttp://idr.nitk.ac.in/jspui/handle/123456789/15912-
dc.description.abstractSurface level sulphur (S) doped TiO2 nanorods (S-TNRs) were fabricated via toxic-free novel three-step processes such as low-temperature hydrothermal method followed by thermal evaporation (S layer) and post-annealing (350 °C, 450 °C and 550 °C) techniques. Present work focuses on the comprehensive studies of surface level doping, structure, morphology and compositional properties of different temperature annealed S-TNRs for CZTS thin-film (Au/CZTS/S-TNRs/TNRs/FTO) solar cells. The oxidation states of incorporated S atoms in the TiO2 matrix were identified from X-ray photoelector spectroscopy (XPS) analysis. A reduction in bandgap for 350 °C annealed S-TNRs film was observed from UV-Vis spectroscopy. The electrical characteristics showed the fabricated solar cells strongly depend on the S-TNRs annealing temperature. Proposed technique would be useful in effective and controlled (surface level) doping of S atoms into any desired nanostructured metal oxides for optoelectronic applications and, further useful in fabricating cadmium (Cd) free buffer layer in chalcogenide solar cells. © 2020 Elsevier Ltden_US
dc.titleToxic-free surface level sulphur doped 1D Ti-Ox-Sy nanorods for superstrate heterojunction CZTS thin-film solar cellsen_US
dc.typeArticleen_US
Appears in Collections:1. Journal Articles

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