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DC Field | Value | Language |
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dc.contributor.author | Varadharajaperumal S. | |
dc.contributor.author | Alagarasan D. | |
dc.contributor.author | Sripan C. | |
dc.contributor.author | Ganesan R. | |
dc.contributor.author | Satyanarayan M.N. | |
dc.contributor.author | Hegde G. | |
dc.date.accessioned | 2021-05-05T10:28:28Z | - |
dc.date.available | 2021-05-05T10:28:28Z | - |
dc.date.issued | 2021 | |
dc.identifier.citation | Materials Research Bulletin Vol. 133 , , p. - | en_US |
dc.identifier.uri | https://doi.org/10.1016/j.materresbull.2020.111081 | |
dc.identifier.uri | http://idr.nitk.ac.in/jspui/handle/123456789/15912 | - |
dc.description.abstract | Surface level sulphur (S) doped TiO2 nanorods (S-TNRs) were fabricated via toxic-free novel three-step processes such as low-temperature hydrothermal method followed by thermal evaporation (S layer) and post-annealing (350 °C, 450 °C and 550 °C) techniques. Present work focuses on the comprehensive studies of surface level doping, structure, morphology and compositional properties of different temperature annealed S-TNRs for CZTS thin-film (Au/CZTS/S-TNRs/TNRs/FTO) solar cells. The oxidation states of incorporated S atoms in the TiO2 matrix were identified from X-ray photoelector spectroscopy (XPS) analysis. A reduction in bandgap for 350 °C annealed S-TNRs film was observed from UV-Vis spectroscopy. The electrical characteristics showed the fabricated solar cells strongly depend on the S-TNRs annealing temperature. Proposed technique would be useful in effective and controlled (surface level) doping of S atoms into any desired nanostructured metal oxides for optoelectronic applications and, further useful in fabricating cadmium (Cd) free buffer layer in chalcogenide solar cells. © 2020 Elsevier Ltd | en_US |
dc.title | Toxic-free surface level sulphur doped 1D Ti-Ox-Sy nanorods for superstrate heterojunction CZTS thin-film solar cells | en_US |
dc.type | Article | en_US |
Appears in Collections: | 1. Journal Articles |
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