Conduction mechanisms in vacuum deposited p-ZnTe/n-Si heterojunction diodes

Please use this identifier to cite or link to this item: http://idr.nitk.ac.in/jspui/handle/123456789/7533

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DC Field	Value	Language
dc.contributor.author	Rao, K.G.
dc.contributor.author	Bangera, K.V.
dc.contributor.author	Shivakumar, G.K.
dc.date.accessioned	2020-03-30T10:02:29Z	-
dc.date.available	2020-03-30T10:02:29Z	-
dc.date.issued	2011
dc.identifier.citation	AIP Conference Proceedings, 2011, Vol.1349, PART A, pp.601-602	en_US
dc.identifier.uri	http://idr.nitk.ac.in/jspui/handle/123456789/7533	-
dc.description.abstract	p-ZnTe/n-Si heterojunction diodes were prepared by vacuum depositing ZnTe films on n-Si substrates. Detailed electrical characterization was performed to determine the conduction mechanisms operating in the diode. Important parameters such as ideality factor and barrier height were also determined. � 2011 American Institute of Physics.	en_US
dc.title	Conduction mechanisms in vacuum deposited p-ZnTe/n-Si heterojunction diodes	en_US
dc.type	Book chapter	en_US
Appears in Collections:	2. Conference Papers

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