Please use this identifier to cite or link to this item: http://idr.nitk.ac.in/jspui/handle/123456789/8284
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dc.contributor.authorShourie, R.J.
dc.contributor.authorSatyanarayan, M.N.
dc.contributor.authorUmesh, G.
dc.date.accessioned2020-03-30T10:18:20Z-
dc.date.available2020-03-30T10:18:20Z-
dc.date.issued2013
dc.identifier.citationMaterials Research Society Symposium Proceedings, 2013, Vol.1566, , pp.-en_US
dc.identifier.urihttp://idr.nitk.ac.in/jspui/handle/123456789/8284-
dc.description.abstractWe present the studies of Terahertz (THz) Semiconductor-Insulator- Semiconductor (SIS) Planar Plasmonic waveguide of Indium Antimonide (InSb) with cavities along the waveguide acting as resonator. The Surface Plasmon Polariton (SPP) modes were confined in the SI interface and resonance behavior and filtering functionality of the device were demonstrated. The transmission characteristic of the structure depends on the interference effects between the SPP mode passing through the cavity and the one returning from the cavity. These effects were observed by studying the transmission from the SIS waveguide as a function of frequency and cavity length and proving analytically using the analogy with microwave transmission line network. Furthermore, we present the SIS cavity resonator's transmission characteristics which vary with changes in the dielectric constant of the insulator region. Such a study was proposed to incorporate in the structure for sensing of biomolecules in THz region. Copyright � Materials Research Society 2014.en_US
dc.titleIndium antimonide (InSb) cavity resonators based on planar plasmonic terahertz waveguideen_US
dc.typeBook chapteren_US
Appears in Collections:2. Conference Papers

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